About Orbitt SpaceOrbitt Space is developing next-generation electric propulsion systems and advanced power electronics for ultra-low Earth orbit (ULEO) satellites. Our work focuses on plasma thrusters, High Voltage Power Systems, and GaN-based high-frequency power converters — pioneering technology for sustainable access to space.Role OverviewWe are seeking a Power Electronics Engineer – II (R&D) with hands-on experience in wide bandgap (GaN) device-based dc-dc converter design and MHz-range RF power electronics.You will design, develop, and test high-frequency RF generators and advanced converter topologies including Class E, Class EF, half-bridge, and full-bridge systems for plasma propulsion and wireless power transfer applications.This is a core R&D role where your innovations will directly influence the next generation of Orbitt’s propulsion and energy systems.Key ResponsibilitiesDesign and develop RF power generators operating in the MHz frequency range for plasma thrusters.Develop and optimize GaN-based high-frequency converter topologies (Class E, EF, half-bridge, full-bridge, Matching network design).Design custom gate driver circuits and switching mechanisms for wide bandgap devices.Work on resonant and soft-switching converter architectures using MATLAB/Simulink, LTspice, Orcad or PLECS.Design and validate inductive power transfer systems at MHz frequency range.Interface with DSP controllers (TI C2000x) for converter control and modulation.Perform bench-level testing, debugging, and characterization using oscilloscopes, spectrum analyzers, and network analyzers.Design analog and mixed-signal circuits using Op-Amps, ADCs, PWM controllers, and gate drivers.Document test results, design methodologies, and contribute to technical reports for grants and investors.Minimum QualificationsM.E./M.Tech or PhD in Power Electronics , Electrical, Electronics, or related field.Minimum 4 years of hands-on experience in power converter design and testing.Must have: Practical experience with wide bandgap semiconductor (GaN) devices and their gate driving circuits.Experience in MHz-range RF power electronics and resonant topologies (Class E, EF, half-bridge, full-bridge).Strong understanding of PWM and resonant converter control using DSPs (e.g., TI C2000x).Proficiency with PCB design for high-frequency circuits, hardware testing, and signal integrity management.Preferred ExperienceRF power systems for plasma generation, induction heating, or industrial RF applications.Familiarity with wireless power transfer technologies and resonant link optimization.Knowledge of thermal management, EMI/EMC, and space-grade reliability standards.High frequency PCB designTools & PlatformsMATLAB / SimulinkLTspice / PLECS/ OrcadAltium DesignerCode Composer Studio (TI C2000x)Oscilloscopes, Spectrum Analyzers, Network AnalyzersSoft SkillsStrong analytical and problem-solving approachClear communication and documentation skillsResearch-oriented and hands-on mindsetTeam player with ability to work independently in a high-performance R&D setupBenefits
Job Title
Sr Power Electronics Engineer – II (R&D)